By Leonard J. Brillson
"An crucial advisor to digital fabric Surfaces and Interfaces is a streamlined but complete creation that covers the fundamental actual homes of digital fabrics, the experimental thoughts used to degree them, and the theoretical tools used to appreciate, are expecting, and layout them. beginning with the basic digital homes of semiconductors and electric measurements of semiconductor interfaces, this article introduces scholars to the significance of characterizing and controlling macroscopic electric houses via atomic-scale options. The chapters that keep on with current the total diversity of floor and interface ideas now getting used to represent digital, optical, chemical, and structural homes of digital fabrics, together with semiconductors, insulators, nanostructures, and organics. the fundamental physics and chemistry underlying every one process is defined in enough intensity for college kids to grasp the basic rules, with a variety of examples to demonstrate the strengths and barriers for particular purposes. in addition to references to the main authoritative resources for broader discussions, the textual content contains web hyperlinks to extra examples, mathematical derivations, tables, and literature references for the complicated scholar, in addition to execs in those fields. This textbook fills a spot within the present literature for an entry-level path that offers the actual houses, experimental thoughts, and theoretical tools crucial for college kids and execs to appreciate and perform solid-state electronics, physics, and fabrics technological know-how research"-- Read more...
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Additional info for An essential guide to electronic material surfaces and interfaces
Thus, Vapplied = Vinterface + IRSC bulk + IRSC back contact , where RSC bulk and RSC back contact are parasitic semiconductor bulk and back contact resistances, respectively, so that Vinterface < Vapplied . If the deviation of ln J versus VForward is linear, its slope yields the total parasitic resistance RSC bulk + RSC back contact and the correction term ΔVapplied = Imeasured (RSC bulk + RSC back contact ). 5 will also produce a gradual increase in current with reverse bias. 2 Capacitance–Voltage Technique The second most common method to measure carrier heights is the capacitance – voltage (C–V) technique.
4 Conduction and valence band bending at an n-type semiconductor surface. The slope of band bending corresponds to the electric ﬁeld within the depletion region that moves electrons toward the bulk and holes toward the surface. EF remains constant relative to the bulk conduction and valence bands. (Brillson 2010. 5 Representative electronic device structures whose operation depends on interfaces. (a) Solar cell based on Schottky barrier ; (b) quantum well based on carrier conﬁnement by a double heterojunction; (c) resonant tunnel diode based on multilayer heterojunctions; (d) high electron mobility transistor based on surface inversion layer.
Phys. , 127, 2006. 6. Y. (1980) Unified mechanism for Schottky – barrier formation and III-V oxide interface states. Phys. Rev. , 44, 420. 7. Bardeen, J. (1947) Surface states and rectification at a metal semi-conductor contact. Phys. , 71, 717. 8. M. (2007) Physics of Semiconductor Devices, 3rd edn, Wiley-Interscience, New York, Chapter 5. 9. B. (1969) Tunneling in Solids, Academic, New York, pp. 102–110. 10. R. (1965) The Richardson constant for thermionic emission in Schottky barrier diodes.
An essential guide to electronic material surfaces and interfaces by Leonard J. Brillson